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www.buychristianlouboutinonline.comCrystal diode as a formation of p-type and n-type semiconductor diode p-n junction, forming space charge layer on both sides at the interface, and we have built electric fields. When does not exist when the applied voltage, due to poor p-n knot on either side of carrier concentration induced diffusion current and build farm caused by drifting currents are equal in power balance. When outside when there is a positive voltage biased, external electric field and build mutual inhibition of electric field energy dissipation role bringing the carrier diffusion currents caused the forward current. When the external reverse voltage bias is, external electric fields and build farms to strengthen further, forming a certain reverse voltage has nothing to do with reverse bias voltage values in the context of reverse saturation current I0. High when the reverse voltage applied to a certain extent, p-n junction in the space-charge layer carrier on the electric field strength reaches the critical value of the multiplier process, resulting in a large number of electron hole pair, a valu
christian louboutin shoese very high reverse breakdown current, known as the diode breakdown phenomena. Diode type diode types there are many, as the semiconductor material, can be divided into germanium diodes (Ge tube) and Silicon diodes (Si tubes). According to its different uses, can be div
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ided into the detector diode, rectifier diode, Zener diode, switching diodes, etc. In accordance with the core structure, can be divided into point-contact diode, surface-contact diodes and Planar diode. Point-contact diode is a very fine wire in smooth surface of semiconductor wafers, through pulse current, touching one end of the wire with the chip securely sintered together, forming a "PN junction". Because it is the point of contact, only allowed to pass small currents (not more than dozens of MA), applicable to high frequency low current circuit, such as a radio detector. Contact-type diode "PN junction" larger, to allow the large current (a few to dozens of elderly),
christian louboutin shoes mainly for the AC into DC "rectifier" in the circuit. Planar diode is a special silicon diode, it not only can pass large currents, and the performance is stable and reliable, usually used in switching, pulse and high-frequency circuits. Conductivity of diode diode most important feature is the electrical conductivity of single direction. In the circuit, the current only flows from the diode cathode, anode outflow. Through a simple experiment below description diode's forward and reverse characteristics. 1, positive characteristics in electronic circuits, the diode cathode connected to the hot end, cathode connected to the low voltage side, would have breakover diode, this connection method, referred to as forward bia
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ough the diode is very weak. Only when the forward voltage reaches a certain value (this value is known as "threshold voltage" germanium tubes of about 0.2V, silicon tube is about 0.6V), diodes to direct conduction. Breakover diode voltage at both ends are essentially remain unchanged (germanium tubes of about 0.3V, silicon tube is approximately 0.7V), known as the diode "positive pressure drop &rdquo